适用于复杂电路分析的IGBT模型.pdfVIP

第 30 卷 第 9 期 中 国 电 机 工 程 学 报 Vol.30 No.9 Mar.25, 2010 2010 年 3 月 25 日 Proceedings of the CSEE ©2010 Chin.Soc.for Elec.Eng. 1 文章编号：0258-8013 (2010) 09-0001-07 中图分类号：TM 85 文献标志码：A 学科分类号：470·40 适用于复杂电路分析的 IGBT 模型 邓夷，赵争鸣，袁立强，胡斯登，王雪松 ( 电力系统及发电设备控制和仿真国家重点实验室(清华大学电机系) ，北京市 海淀区 100084) IGBT Model for Analysis of Complicated Circuits DENG Yi, ZHAO Zheng-ming, YUAN Li-qiang, HU Si-deng, WANG Xue-song (State Key Laboratory of Control and Simulation of Power System and Generation Equipment (Department of Electrical Engineering, Tsinghua University), Haidian District, Beijing 100084, China) ABSTRACT: A new insulated gate bipolar transistor (IGBT) 0 引言 model for simulation of complicated circuits was presented. It 绝缘栅双极性晶体管(insulated gate bipolar piecewise modeled the turn-on and -off transient of IGBT, and simulated the static characteristics by curve fitting method. transistor ，IGBT)集功率金属氧化物半导体场效应晶 High simulation speed, easy parameters determination and 体管(metal-oxide-semiconductor field-effect clear physical meaning are its key features. The equivalent transistor ，MOSFET)和功率晶体管的输出特性于一 circuit, structure, and parameter extraction of the model were 体，具有栅极驱动功率低、工作频率高、输出电流 described, and it was realized with the simulation tool of PSIM 大和通态电阻小等优点，在电力电子变换器中的应 package. The parameters of the model were provided for an 用日益普遍，受到了广泛的关注和研究[1-4] 。建立实 IGBT of FF300R12ME3 as an example. The model was used 用准确的 IGBT 模型，对变换器的安全可靠运行和 in analysis of switching characteristics, snubber circuit, and