第4章基本单元电路.pptVIP

* 多电压/多阈值技术 * 多电压/多阈值技术 关键路径：高电压/低阈值 非关键路径：低电压/高阈值 4.5.2 低功耗技术 实现高速度/低功耗逻辑门的方法： 改变导电因子K、电源电压VDD和阈值电压VT； 调整器件尺寸； 多电压技术； 多阈值技术； 动态阈值技术。 低功耗设计可以在电路的不同层级进行。 北京大学微电子学系 贾嵩 2010 * * * * * * * * * * CL being lower also contributes to power savings * This behavior is fundamentally different than the static counterpart that always has a low resistance path between the output and one of the power rails. * leakage sources are reverse-biased diode and the sub-threshold leakage of the NMOS pulldown device. Charge stored on CL will leak away with time (input in low state during evaluation) Requires a minim