电子器件场效应晶体管4.pptxVIP

6.5 The MOS Field Effect Transistor;6.5.1 Output characteristics(输出特性,ID~VD);;;If we neglect the variation of Qd(x) with bias Vx, Qn(x) can be simplified to;;To obtain the exact ID, ;6.5.2 Transfer Characteristics(转移特性, ID~VG);Effect of the effective channel mobility and source/drain series resistance;Fig.6-28;????;Effect of Transverse electric field;Effect of longitudinal electric field : ;6.5.4 Short channel MOSFET I-V characteristics ;;1）flat band voltage;2）threshold voltage;3）depletion mode because VT0;6.5.5 Control of threshold voltage ;Control of Ci: (1) d thickness of gate oxide and field oxide (2) high ?i material : Ta2O5, ZrO2 and ferroelectrics ;Problem: Consider an n+ polysilicon-SiO2 –Si p-channel device with Nd=1016cm-3 and Qi=5×1010qC/cm2. Calculate VT for a gate oxide thickness of 0.01μm and repeat for a field oxide thickness of 0.5μm. Фms=-0.25V.;Threshold adjustment by ion implantation;For n-channel (p type substrate) MOSFET;Ion implantation(离子注入) main parameters: implantation energy (注入能量) keV implantation dose (注入剂量) ions/cm2;Example 6-3 For a p-channel transistor with a gate oxide thickness of 10nm, calculate the boron ion dose FB(B+ ions/cm2) required to reduce VT from -1.1V to -0.5V. Assume that the implanted acceptors form a sheet of negative charge just below the Si surface. If ,instead of a shallow B implant, it was a much broader distribution, how would the VT calculation change ? Assuming a boron ion beam current of 10-5 A, and supposing that the area scanned by the ion beam is 650cm2, how long does this implant take? ;Some questions;standby 待机 reciprocal 倒数 scaling down/等比例缩小 power dissipation/功耗 packing density/集成密度 operation speed/工作速度 channel hot electron effect/沟道热电子效应 substrate hot electron effect/衬底热电子效应 Miller overlap Capacitance 米勒覆盖电容;lightly doped drain(LDD)/轻掺杂漏 drain-induced barrier lowering(DIBL)/漏感应势垒降低 punchthrough/穿通 shallow junction/浅结 charge sharing/电荷共享 self-aligned gate/自对准栅 overlap c