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- 约1.05千字
- 约 8页
- 2019-12-08 发布于湖北
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標準製程 Charge pumping量測平台 Flash Memory量測平台 Flash Memory量測平台-window Flash Memory量測平台-speed Flash Memory量測平台-retention * Charge pumping 量測平台建置 Flash memory量測平台建置 4156A 81110A Control PC (LabView) Switch N+ N+ P - type A SMU Agilent 81110A A SMU Ids Icp 建置者: 呂明霈博士 使用規範: 使用LabView控制4156, 81110 switch為手動操作 Charge-Pumping Measurement Vth Vfb Vpeak Vbase Icp Vpeak Icp = Nit × q × f × A Where Icp is charge-pumping current; q is electronic charge; A is device area; f is frequency; Nit is trapped charge; Nit = Dit × ΔE Where Dit is interface trap density; ΔE is Fermi level energy diffe
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