光电子学南邮全部作业答案.pptVIP

Condition: a silicon photoconductor at 300K Background doping, Electron mobility, Hole mobility, Electron lifetime, Hole lifetime, Detector area, Detector length, Bias voltage, Gerneration rate, 2.10 Calculation: a)dark current ; b)the excess concentration; c) the photoconductivity; d)the device gain. Solution: a)The dark current is given by so the dark current is = = b)