2015异质结的能带图3剖析.pptxVIP

1扩散和热电子发射模型的异同。 2界面态对能带的影响有那些 。 3异质结的注入比。 4什么是超注入现象。 ;;3.3.1 界面态密度较小;采用的样品;The capacitance of a p -n heterojunction, excluding interface states and deep-level traps, has been given by Anderson;The effect of interface states on the single-heterojunction capacitance was investigated by Donnelly and Milnes who obtained the following expression:; the doping level in the active layer is 2x1017cm-3 16 h degradation, the slope of line 2 remains essentially the same as line 1. VD ?1. 58 V. QIS= 3x1012 cm-2 . 62 h degradation(line 3), the slope is reduced but the diffusion voltage remains unchan