《E第1章 电力电子器件概述2》.ppt

Second breakdown of GTR Primary breakdown：集电极电压升高至击穿电压时，Ic迅速增大,出现雪崩击穿。 只要Ic不超过限度，GTR一般不会损坏，工作特性也不变。 Second breakdown：一次击穿发生时，如不能有效的限制电流，Ic突然急剧上升，电压陡然下降。常常立即导致器件的永久损坏，或者工作特性明显衰变 。 Safe operating area (SOA) of GTR SOA 最高电压UceM、集电极最大电流IcM、最大耗散功率PcM、二次击穿临界线PsB限定。 oxide A classification Basic structure Symbol insulated gate N Channel Structures of power MOSFET Power MOSFET: Depletion-type——当栅极电压为零时漏源极之间就存在导电沟道。 Enhancement-type——对于N（P）沟道器件，栅极电压大于（小于）零时才存在导电沟道。 Unipolar device: Only majority carriers participate the conducting conduction mechanism is the same as that of low power MOS， but power MOSFET differs vastly from MOS in the structures 采用多元集成结构，不同的生产厂家采用了不同设计。 Physics of MOSFET operation P-N- junction is reverse-biased(漏源极间加正电源，栅源极间电压为零,P基区与N漂移区之间形成的PN结反偏，漏源极之间无电流流过)。 off-state voltage appears across n- region Off-state(截止) Physics of MOSFET operation p-n- junction is slightly reverse biased positive gate voltage induces conducting channel(在栅源极间加正电压UGS,当UGS大于UT时，P型半导体反型成N型而成为Inversion layers(反型层)，该反型层形成N沟道而使PN结消失，漏极和源极导电 ) drain current flows through n- region and conducting channel On-state(导电) on resistance = total resistances of n- region, Static characteristics of power MOSFET  I-V Characteristics of Drain（Output Characteristics ） Cut-off area（对应于GTR的截止区） Active area（对应于GTR的amplification area） Ohmic area（对应GTR的saturation area） Works in switching states, i.e., it converts and reconverts between cut-off area and ohmic area。 On-resistance has a positive temperature coefficient，which is advantageous to current sharing in parallel connection of devices (Because if the current↑, then temperature ↑, at last on-resistance ↗，then the increasement of current is limited) The body diode of power MOSFET The body diode Equivalent circuit Switching characteristics of power MOSFET Turn-on transient –Turn-on delay time td(on) – Rise time tr Turn-off transient –Turn-off delay time td(off) –Falling time tf Test circuit