MEM2310M3_E6.0微盟原厂规格书.pdf免费

MEM2310 N-Channel MOSFET MEM2310M3 General Description Features MEM2310M3G Series N-channel enhancement mode  30V/5.8A field-effect transistor ,produced with high cell density R =25mΩ@ V =10V, I =5.8A DS(ON) GS D DMOS trench technology, which is especially used to R =28mΩ@ V =4.5V, I =5A DS(ON) GS D minimize on-state resistance. This dev