将PE29100 EVB与EPC8009 eGaN FET一起使用时的注意事项.pdfVIP

Considerations Using PE29100 EVB with EPC8009 eGaN FETs Application Note 64 Summary The PE29100 evaluation board (EVB) populated with EPC8009 enhancement mode power transistors allows the user to evaluate the PE29100 high-speed driver in a half-bridge config- uration. The following topics are intended to point out general guidelines when designing with the high-speed driver. • Bootstrap overcharging • Minimum pulse width • False triggering effect caused by negative inductor current • Maximum input operating voltage • Operating frequency range Introduction The PE29100 integrated high-speed driver is designed to control the gates of external power devices such as enhancement mode gallium nitride (eGaN®) field effect transistors (FETs). The outputs of the PE29100 are capable of providing switching transition speeds in the sub nanosecond range for hard switching applications up to 33 MHz. Certain precautions need to be observed when designing with the PE29100 driver. This document identifies the operational limits of the PE29100 in a half-bridge configuration using two EPC8009 eGaN FETs. Operating the circuit beyond these recommended limits can result in damage to both the driver and power transistors. Bootstrap Overcharging Bootstrap overcharging is an artifact of the half-bridge topology when using a high-side bootstrap diode. When a large voltage drop across the low-side FET conducts current through it’s body diode during the dead-time period after the low-side device turns off and before