电子产品的生产与检验 8.2.2项目课件（40个） 06.PCBA生產注意事項(二).pptVIP

Charged Device Model C approx. 3 pF R approx. 25 ohms (Ω) L approx. 10nH Human Body Model C = 100 pF R = 1500 ohms (Ω) Machine Model C = 200 pF L = 0.75 μH ESD Model (1) The Human Body Model (HBM) is the ESD testing standard, andis defined in the MIL-STD-883C method 3015.7. It representsa charged person touching agrounded device. It is the originalmodel used to simulate ESDdamage by a human, and is themost well known (2) The Machine Model (MM) represents a worst case HBM. It provide more realisticsimulation of actual damage normally obtained from a person holding a tool. EOS/ESDAssociation Draft Standard DS5.2 –1993 describes use of the HBM for device classificationand? (3) The Charged Device Model (CDM) simulates the damage resulting from a charged devicecontacting a metal grounded surface. This failure mode is very damaging and is associatedwith automated handling equipment and use of dip tubes. EOS/ESD Association Dra? 2. ESD保护线路不适当。 3. ESD管制不足。 a. 作业员未戴抗静电环(接地腕带)接触IC。 b. 缺乏对所用材料的防静电管制。 c. 工作站未接地。 d. 自动化系统的设计不当，致引起充电装置模式失效，Ex : ICT, ATE, SMT……→ Chip Set 不良高。 e. 湿度低 (30% RH, 如在寒冷干燥环境)。 4. 缺乏ESD警觉意识和训练。 (可依JESD625-A及IPC-A-610C标准规范教育训练) SEM photo of drain/gate diffusion edge damage SEM photo of silicon melting due to current filamentation in a nMOS output transistor SEM photo showing holes at the silicon to field oxide interface in the drain diffusion of an FOD protection device SEM photo of an nMOS transistor in an output buffer showing damage at the drain/gate diffusion edge. 5. ESD 不良品分析图片： The SEM photograph of the contact burn out at ESD protection circuit of pad 60 (Lvref) forVT3091A device Pad60 (Lvref) Poly gate Poly gate a. VT3091A ESD_HBM pad60(Lvref) fail SEM photo of damage due to a polycrystalline filament in a trick oxide device. SEM photo of a contact hole in the drain diffusion of an output transistor showing contact spiking. b. VT3091A ESD_HBM pad63(VCC2) fail The OM and SEM photograph of the poly burn ou