半导体物理与器件第四版课后习题答案1.docVIP

Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ PAGE PAGE 1 Chapter 1 Problem Solutions 1.1 fcc: 8 corner atomsatom 6 face atoms atoms Total of 4 atoms per unit cell bcc: 8 corner atomsatom 1 enclosed atom =1 atom Total of 2 atoms per unit cell Diamond: 8 corner atomsatom 6 face atomsatoms 4 enclosed atoms = 4 atoms Total of 8 atoms per unit cell _______________________________________ 1.2 Simple cubic lattice: Unit cell vol 1 atom per cell, so atom vol Then Ratio Face-centered cubic lattice Unit cell vol 4 atoms per cell, so atom vol Then Ratio Body-centered cubic lattice Unit cell vol 2 atoms per cell, so atom vol Then Ratio Diamond lattice Body diagonal Unit cell vol 8 atoms per cell, so atom vol Then Ratio _______________________________________ 1.3 ; From Problem 1.2d, Then Center of one silicon atom to center of nearest neighbor Number density cm Mass density grams/cm _______________________________________ 1.4 4 Ga atoms per unit cell Number density Density of Ga atoms cm 4 As atoms per unit cell Density of As atoms cm 8 Ge atoms per unit cell Number density Density of Ge atoms cm _______________________________________ 1.5 From Figure 1.15 _______________________________________ 1.6 _______________________________________ 1.7 (a) Simple cubic: (b) fcc: (c) bcc: