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TM Technical Note TN 263 D-Flash programming support in HI-WAVE for the S12P, S12XEx, S12XS The present document describes how to load initialized variable in D-Flash/EEPROM. This feature is available only in large memory model. The Flash Programming algorithms for the following devices include support for the programming of these areas. And to use this efficiently it is required to adjust the project. This document explains how to adjust the project in order to be able to program D-Flash. Supported devices This feature is available for the following devices: S12XEP100 S12XEP768 S12XEQ512 S12XEQ384 S12XEG384 S12XES384 S12XET256 S12XEA256 S12XEG128 S12XEA128 S12XS256 S12XS128 S12XS64 S12P128 S12P96 S12P64 S12P32 Project adjustment The project configuration might require adjustment in order to use the programmer support, this is related to the definition of the memory areas in the linker configuration file and burner command file in case if the S-record format is required to be loaded. PRM file The PRM file shall have definition of the D-Flash areas with the following considerations: D-Flash segments shall be defined using the 24-bit logical address. For example, PRM file for the S12XEP100 derivative should include D-flash definitions in the SEGMENT list: EEPROM_00 = READ_ONLY 0x000800 TO 0x000BFF; EEPROM_01 = READ_ONLY 0x010800 TO 0x010BFF; Page 1 of 3 Rev. 1.2 TM Technical Note TN 263 EEPROM_02 = READ_ONLY 0x020800 TO 0x020BFF; ... EEPROM_1F = READ_ONLY 0x1F0800 TO 0x1F0BFF; The PLACEMENT statem