IRS2103SPBF;IRS2103PBF;IRS2103STRPBF;中文规格书,Datasheet资料.pdfVIP

Data Sheet No. PD60263 IRS2103(S)PbF HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • Fully operational to +600 V VOFFSET 600 V max. • Tolerant to negative transient voltage, dV/dt immune IO+/- 130 mA/270 mA • Gate drive supply range from 10 V to 20 V • Undervoltage lockout VOUT 10 V - 20 V • 3.3 V, 5 V, and 15 V logic compatible • Cross-conduction prevention logic ton/off (typ.) 680 ns/150 ns • Matched propagation delay for both channels • Internal set deadtime Deadtime (typ.) 520 ns • High-side output in phase with HIN input • Low-side output out of phase with input Packages • RoHS compliant Description The IRS2103 is a high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC 8-Lead PDIP 8-Lead SOIC and latch immune CMOS technologies enable rugge- IRS2103 IRS2103S dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross- conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V. Typical Connection