SI2301_2.0数据手册下载.pdf免费

SI2301 P-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The SI2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. FEATURES VDS = -20V, ID = -2.3A D RDS(ON) 165mΩ @ VGS=4.5V Available in a 3-Pin SOT23-3 Package M