参考内容完整半导体微电子学mosfet_parameters_ac.pptVIP

Power MOSFET parameters - UIS To increase the ruggedness: N- P+ N+ S G D Deep body P Shallow P+ Body contact enrichment Power MOSFET parameters - UIS To increase the ruggedness: N- N+ S G D Deep body P Shallow P+ Body contact enrichment μtrench (source vertical contact) Thank you sdadja * Inverse Recovery Current T ISD di/dt=100A/μs ID nom TIRM TRR 10% IRM IRM Qrr DRN2 1st epi 2nd epi DRN2 DRN1 DRN1 Minority carrier injection reduction – simulated results EDD3 Standard structure New hypothesis DRN2 1st epi 2nd epi DRN2 DRN1 DRN1 Additional phosphorus implant Std New hypothesis Qrr [uC