1N5401G-1N5408G-DO-27广东奥科半导体.pdf免费

1N5401G THRU 1N5408G DO-27 Standard Silicon Rectifiers Reverse Voltage - 100 to 1000 V Forward Current - 3 A FEATURES  For surface mounted applications  Glass Passivated Chip Junction  Low profile package  Ideal for automated placement  Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA  Case: DO-201AD/DO-27 Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.98 g / 0.0345oz DO-201AD/ DO-27 Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Parameter Symbols 1N5401G 1N5402G 1N5404G 1N5405G 1N5406G 1N5407G 1N5408G Units Maximum Repetitive Peak Reverse Voltage VRRM 100 200 400 500 600 800 1300 V Maximum RMS voltage VRMS 70 140 280 350 420 560 910 V Maximum DC Blocking Voltage VDC 100 200 400 500 600 800 1300 V Maximum Average Forward Rectified Current IF(AV) 3.0 A at Tc = 100 °C Peak Forward Surge Current 8.3 ms Single IFSM 150.0 A Half Sine Wave Superimposed on Rated Load Maximum Instantaneous Forward Voltage at 3.0 A VF 1.1 V Maximum DC Reverse Current Ta = 25 °C