场效应MOS管AK3416参数6.5A20V封装SOT-23.pdf免费

AK3416 AK N-Channel Enhancement Mode Power MOSFET Description The AK3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● V = 20V,I =6.5A Schematic diagram DS D RDS(ON) 40mΩ @ VGS=1.8V RDS(ON) 33mΩ @ VGS=2.5V RDS(ON) 27mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM application ● Load switch Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3416 AK3416 SOT-23 Ø180mm 8mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 6.5 A Drain Current-Pulsed (Note 1) IDM 30 A Maximum Power Dissipation PD 1.4 W Operating Junction and Storage Temperature Range