场效应MOS管AK8205T参数5A20V封装SOT-23-6L.pdf免费

AK8205T AK N-Channel Enhancement Mode Power MOSFET D 1 D 2 Description The AK8205t uses advanced trench technology to provide G 1 G 2 excellent RDS(ON), low gate charge and operation with gate S 1 S 2 voltages as low as 2.5V. This device is suitable for use as a Schematic diagram Battery protection or in other Switching application. General Features ● V = 20V,I = 5A DS D RDS(ON) 32mΩ @ VGS=2.5V RDS(ON) 23mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 8205t AK8205t SOT23-6L Ø180mm 8mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 5 A