场效应MOS管AK8205参数4A20V封装SOT-23-6L.pdf免费

AK8205 AK N-Channel Enhancement Mode Power MOSFET Description D 1 D 2 The AK8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G 1 G 2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S 2 Schematic diagram General Features ● V = 20V,I = 4A DS D RDS(ON) 37mΩ @ VGS=2.5V RDS(ON) 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 8205 AK8205 SOT23-6L Ø180mm 8mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Drain Current-Continuous ID 4 A Drain Current-Pulsed (Note 1) IDM