场效应MOS管AK60P35参数-35A-60V封装TO-220.pdf免费

AK60P35 AK P-Channel Enhancement Mode Power MOSFET Description The AK60P35 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● V =-60V,I =-35A DS D RDS(ON) 32mΩ @ VGS=-10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● High side switch for full bridge converter ● DC/DC converter for LCD display 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK60P35 AK60P35 TO-220-3L - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -35 A Drain Current-Continuous(T =100℃) I (100℃) -24.8 A C