场效应MOS管AK01H14T参数140A100V封装TO-247.pdf免费

AK01H14T AK N-Channel Enhancement Mode Power MOSFET Description The AK01H14T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =100V,I =140A DS D RDS(ON) 5.5mΩ @ VGS=10V (Typ4.5mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK01H14T AK01H14T TO-247 - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 140 A Drain Current-Continuous(T =100℃) I (100℃) 97 A