场效应MOS管AK2302B参数3.3A20V封装SOT-23.pdf免费

AK2302B AK N-Channel Enhancement Mode Power MOSFET Description The AK2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Schematic diagram ● V = 20V,I = 3.3A DS D RDS(ON) 60mΩ @ VGS=2.5V RDS(ON) 45mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2302B AK2302B SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 3.3 A Drain Current-Pulsed (Note 1) IDM 16 A Maximum Power Dissipation PD 0.9 W Operating Junction and Storage Temperature Range