场效应MOS管AK15P25J参数-25A-150V封装TO-220.pdf免费

AK15P25J AK P-Channel Enhancement Mode Power MOSFET Description The AK15P25J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =-150V,I =-25A DS D Schematic diagram RDS(ON) 135mΩ @ VGS=-10V （Typ.=120mR ） RDS(ON) 160mΩ @ VGS=-10V （Typ.=131mR ） ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Application ● Portable equipment and battery powered systems 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK15P25J AK15P25J TO-220-3L Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS -150 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -25 A Drain Current-Continuous(T =100℃) I (100℃) -17 A C D Pulsed Drain Current IDM