10V150SP TO-277广东奥科半导体.pdf免费

10V150SP TO-277 Trench MOS Barrier Schottky Rectifier Reverse Voltage - 150 V Forward Current - 10 A FEATURES Advanced trench technology  Low forward voltage drop  Low power losses  High efficiency operation  Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA  Case: TO-277 Terminals: Solderable per MIL-STD-750, Method 2026 TO-277 Maximum Ratings (Per Leg) at Ta=25°C unless otherwise specified Parameter Symbols Value Units Maximum Repetitive Peak Reverse Voltage VRRM 150 V Maximum RMS voltage VRMS 150 V Maximum DC Blocking Voltage VDC 150 V Maximum Average Forward Rectified Current Per diode IF(AV) 10 A Peak Forward Surge Current, 8.3ms Single Half Sine-wave IFSM 280 A superimposed on rated load per diode Operating Temperature Range TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Typical Thermal Resistance Per diode(munted on