MMBT5401DW SOT-广东奥科半导体.pdf免费

MMBT5401DW SOT-363 PNP Silicon Epitaxial Planar Transistor for high voltage amplifier applications 6 5 4 TR2 TR1 1 2 3 1. Emitter 2. Base 3. Collector 4. Emitter 5. Base 6. Collector Simplified outline(SOT-363) Absolute Maximum Ratings (T = 25℃) a Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current Continuous -IC 600 mA Power Dissipation Ptot 200 mW Junction Temperature Tj