场效应MOS管AK3407A参数-4.3A-30V封装SOT-23.pdf免费

场效应MOS管AK3407A参数-4.3A-30V封装SOT-23.pdf

AK3407A AK P-Channel Enhancement Mode Power MOSFET Description D The AK3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. S General Features ● V = -30V,I = -4.3A Schematic diagram DS D RDS(ON) 90mΩ @ VGS=-4.5V RDS(ON) 52mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3407A Ẋ AK3407A SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -4.3 A Drain Current-Pulsed (Note 1) IDM -20 A Maximum Power Dissipation

文档评论(0)

1亿VIP精品文档

相关文档