场效应MOS管AK2006Y参数6A20V封装SOT-23-3L.pdf免费

AK2006Y AK N-Channel Enhancement Mode Power MOSFET Description The AK2006Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =20V,I =6A DS D RDS(ON) 13mΩ @ VGS=4.5V (Typ:10.5mΩ) Schematic diagram RDS(ON) 18mΩ @ VGS=2.5V (Typ:15mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Load switching ● Uninterruptible power supply Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2006Y AK2006Y SOT23-3L Ø180mm 8mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 6 A Drain Current-Continuous(T =100℃) I (100℃) 4.2 A C D