场效应MOS管AK15H11T参数110A150V封装TO-247.pdf免费

AK15H11T AK N-Channel Enhancement Mode Power MOSFET Description The AK15H11T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features ● V =150V,I =110A Schematic diagram DSS D RDS(ON) 13mΩ @ VGS=10V （Typ ：10 mΩ） ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK15H11T AK15H11T TO-247 - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDSS 150 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 110 A Drain Current-Continuous(T =100℃) I (100℃)