场效应MOS管AK7580T参数80A75V封装TO-247.pdf免费

AK7580T AK N-Channel Enhancement Mode Power MOSFET Description The AK7580T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● V = 75V,I =80A Schematic diagram DS D RDS(ON) 8mΩ @ VGS=10V （Typ ：6.5mΩ） ● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK7580T AK7580T TO-247 - - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ±25 V Drain Current-Continuous ID 80 A Drain Current-Continuous(T =100℃)