场效应MOS管AK01H29T参数290A100V封装TO-247.pdf免费

AK01H29T AK N-Channel Enhancement Mode Power MOSFET Description The AK01H29T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features ● V =100V,I =290A DSS D RDS(ON) 3.0mΩ @ VGS=10V （Typ ：2.4mΩ） Schematic diagram ● Good stability and uniformity with high EAS ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● DC motor drive ● High efficiency synchronous rectification in SMPS ● Uninterruptible power supply ● High speed power switching ● Hard switched and high frequency circuits 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK01H29T AK01H29T TO-247 - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 290 A Drain Current-Continuous(T =100℃) I (100℃) 200 A