2N7002W SOT-323广东奥科半导体.pdf免费

2N7002W SOT-323 N-Channel MOSFET Features 1.Gate 2.Source High density cell design for low RDS(ON) 3.Drain Voltage controlled small signal switch ■Simplified outline(SOT-323) Rugged and reliable D High saturation current capability G S Absolute Maximum Ratings Ta=25 Parameter Symbol Rating Unit Drain-Source voltage VDS 60 V Drain Current ID 115 mA Power Dissipation PD 225 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter