场效应MOS管AK2303参数-2.0A-30V封装SOT-23.pdf免费

场效应MOS管AK2303参数-2.0A-30V封装SOT-23.pdf

AK2303 AK P-Channel Enhancement Mode Power MOSFET Description D The AK2303 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. S General Features ● V = -30V,I = -2.0A Schematic diagram DS D RDS(ON) 130mΩ @ VGS=-10V RDS(ON) 180mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2303 AK2303 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -2.0 A Drain Current-Pulsed (Note 1) IDM -10 A Maximum Power Dissipation

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