场效应MOS管AK3400E参数5.3A30V封装SOT-23.pdf免费

AK3400E AK N-Channel Enhancement Mode Power MOSFET Description The AK3400E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protested. General Features Schematic diagram ● V = 30V,I = 5.3A DS D RDS(ON) 57mΩ @ VGS=2.5V RDS(ON) 40mΩ @ VGS=4.5V RDS(ON) 33mΩ @ VGS=10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● PWM applications ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3400E Ẋ AK3400E SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 5.3 A Drain Current-Pulsed (Note 1) IDM 22 A Maximum Power Dissipation PD 1.4 W Operating Junction and