场效应MOS管AK20P05Y参数-5A-20V封装SOT-23-3L.pdf免费

AK20P05Y AK P-Channel Enhancement Mode Power MOSFET Description The AK20P05Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features ● V = -20V,I = -5A DS D RDS(ON) 25mΩ @ VGS=-4.5V RDS(ON) 40mΩ @ VGS=-2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Motor drive ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 20P05Y AK20P05Y SOT23-3L Ø180mm 8mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID -5 A Drain Current-Pulsed (Note 1) IDM -20 A Maximum Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range