场效应MOS管AK6003Y参数3A60V封装SOT-23-3L.pdf免费

AK6003Y AK N-Channel Enhancement Mode Power MOSFET D Description The AK6003Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S Schematic Diagram General Features ● V =60V,I =3A DS D RDS(ON) 105mΩ @ VGS=10V RDS(ON) 125mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Battery switch ●DC/DC converter Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 6003Y AK6003Y SOT-23-3L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 3 A Drain Current-Pulsed (Note 1) IDM 10 A Maximum Power Dissipation