场效应MOS管AK1012E参数0.6A20V封装SOT-523.pdf免费

AK1012E AK N-Channel Enhancement Mode Power MOSFET Description The AK1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. Gen- eral Features Schematic diagram ● V = 20V,I =0.6A DS D RDS(ON) 350mΩ @ VGS=4.5V RDS(ON) 500mΩ @ VGS=2.5V RDS(ON) 700mΩ @ VGS=1.8V ESD Rating : HBM 2000V ● High power and current handing capability Marking and pin assignment ● Lead free product is acquired ● Gate-Source ESD protection Application ● Battery operated systems ● Load/ power switching cell phones pagers ● Power supply converter circuits SOT-523 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity A ⎯V AK1012E SOT-523 Ø180mm 8 mm 3000units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Drain Current-Continuous ID 0.6 A Drain Current-Pulsed (N