场效应MOS管AK0103M参数3A100V封装SOT-89.pdf免费

AK0103M AK N-Channel Enhancement Mode Power MOSFET Description The AK0103M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V = 100V,I = 3A DS D RDS(ON) 160mΩ @ VGS=10V (Typ:136mΩ) Schematic diagram RDS(ON) 170mΩ @ VGS=4.5V (Typ:140mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 0103M AK0103M SOT-89-3L Ø180mm 12mm 1000units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 3 A Drain Current-Pulsed (Note 1) IDM 20 A Maximum Power Dissipation PD 1.5