场效应MOS管AK80H11H参数105A80V封装TO-220.pdf免费

AK80H11H AK N-Channel Enhancement Mode Power MOSFET Description The AK80H11H uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =80V,I =105A DS D RDS(ON) 6.5mΩ @ VGS=10V (Typ:5.8mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK80H11H AK80H11H TO-220H-3L - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 105 A Drain Current-Continuous(T =100℃) I (100℃) 74 A