场效应MOS管AK0130A参数30A100V封装TO-220.pdf免费

AK0130A AK N-Channel Enhancement Mode Power MOSFET Description The AK0130A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V = 100V,I =30A Schematic diagram DS D RDS(ON) 32mΩ @ VGS=10V (Typ:25mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK0130A AK0130A TO-220-3L - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 30 A Drain Current-Continuous(TC=100℃) ID (