场效应MOS管AK60P20参数-20A-60V封装TO-220.pdf免费

AK60P20 AK P-Channel Enhancement Mode Power MOSFET Description The AK60P20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● V =-60V,I =-20A DS D RDS(ON) 70mΩ @ VGS=-10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● High side switch for full bridge converter ● DC/DC converter for LCD display 100% UIS TESTED! 100% ΔVds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK60P20 AK60P20 TO-220-3L - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -20 A Drain Current-Continuous(T =100℃) I (100℃) -14 A C