场效应MOS管AK02H10T参数100A200V封装TO-247.pdf免费

AK02H10T AK N-Channel Enhancement Mode Power MOSFET Description The AK02H10T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =200V,I =100A DS D RDS(ON) 18mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK02H10T AK02H10T TO-247 - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 100 A Drain