RS Components 电工电料 达林顿管 BDX53CG 使用说明.pdfVIP

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. DARLINGTON Features 8 AMPERE • High DC Current Gain − COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS • Collector Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B 80−100 VOLTS, 65 WATTS VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc 4 VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* TO−220AB MAXIMUM RATINGS CASE 221A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol Value Unit 1 STYLE 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2 Collector−Emitter Voltage VCEO Vdc 3 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B 80 BDX53C, BDX54C 100 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î