- 1、本文档共59页,可阅读全部内容。
- 2、原创力文档(book118)网站文档一经付费(服务费),不意味着购买了该文档的版权,仅供个人/单位学习、研究之用,不得用于商业用途,未经授权,严禁复制、发行、汇编、翻译或者网络传播等,侵权必究。
- 3、本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己接受本站规则且自行承担风险,本站不退款、不进行额外附加服务;查看《如何避免下载的几个坑》。如果您已付费下载过本站文档,您可以点击 这里二次下载。
- 4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等,请点击“版权申诉”(推荐),也可以打举报电话:400-050-0827(电话支持时间:9:00-18:30)。
查看更多
Preliminary Solutions to Problems and Questions
Chapter 5
Note: Printing errors and corrections are indicated in dark red in Questions 5.4, 5.21 and 5.32.
5.1 Bandgap and photodetection
(a) Determine the maximum value of the energy gap which a semiconductor, used as a
photoconductor, can have if it is to be sensitive to yellow light (600nm).
-2 2
(b) A photodetector whose area is 510 cm is irradiated with yellow light whose intensity is 2
–2
mW cm . Assuming that each photon generates one electron-hole pair, calculate the number of pairs
generated per second.
(c) From the known energy gap of the semiconductor GaAs (Eg = 1.42 eV), calculate the primary
wavelength of photons emitted from this crystal as a result of electron-hole recombination. Is this
wavelength in the visible?
(d) Will a silicon photodetector be sensitive to the radiation from a GaAs laser? Why?
Solution
(a) Given, = 600 nm, we need E = h = E so that,
ph g
-34 8 -1 -9
Eg = hc/ = (6.62610 J s)(310 m s )/(60010 m)
= 2.07 eV
-2 2 -3 2
(b) A = 510 cm and Ilight = 2010 W/cm . The received optical power is
-2 2 -3 2 -3
P = AI = (510 cm )(2010 W/cm ) = 10 W
o light
and N = number of photons arriving per second = P /E
ph o ph
-3
文档评论(0)