ABB High-k dielectrics for SiC power MOSFET technology unrivaled reliability, ruggedness and performance 白皮书(英语)说明书用户手册.pdf

High-k dielectrics for SiC power MOSFET technology: unrivaled reliability, ruggedness and performance S. Wirths, Y. Arango, G. Alfieri, M. Wehrle, A. Mihaila, G. Romano, V. Sundaramoorthy, L. Knoll, T. Keller, Hitachi Energy Ltd., Semiconductors, Switzerland High-performance dielectric improves gate reliability and performance Power electronics today are undergoing an exciting and profound technology shift driven by the steadily growing demand for energy in our digital society and the urgent requirement for low carbon emission transport infrastructures. Si-based power electronics have reached their performance limits regarding high energy-efficient power converters for e-mobility and renewable energy applications, so alternative technologies are required. 1. Abstract SiC MOSFETs have now entered the power devices arena and are the frontrunners to replace traditional Si IGBT technology due to their higher breakdown voltage and thermal conductivity. Despite their successful market entry, several challenges connected to state-of- the-art gate stack technology remain to be solved to fully exploit the enormous potential of SiC power MOSFETs. Conventional SiO gate 2 oxides, for example, suffer from highly defective oxide/SiC inter- faces and the intense electric field across the gate oxide negatively impacts performance and reliability. Hitachi Energy has developed novel MOS gate stack technology based on high-k dielectrics for power electronic devices and, for the first time, has demonstrated fully operational vertical power SiC MOSFETs using high-k-based MOS interfaces. We have successfully fabricated fully functional ver- tical high-k power SiC MOSFETs for several voltage classes, namely Table of contents 1.2kV, 1.7kV and 3.3kV. The low values of SiC/high-k dielectric inter- face trap density boosted device performance by 35% compared to 001