MOSFET参数详解课件.pptVIP

Power MOSFET Technical TrainingDatasheet OverviewGiovanni PriviteraSenior Product EngineerMOSFET IGBT DIVISION giovanni.privitera@ Maximum RatingsRepresent the extreme capability of the devices.To be used as worst conditions (single parameter) that the design should guarantee will not be exceeded. [only VDS VDGR may be exceeded in limited avalanche conditions]Never exceed !!!!!!!!!!!! The avalanche breakdown voltage of ST’s PowerMOSFET is always higher than its voltage rating due to normal production process margins. In order to achieve high forecasted reliability the worst case operating voltage should be lower than the maximum one. The maximum voltage during turn off should not exceed 70 to 90% of the rated voltage. This derating is suggested by the years of experience.For the Drain-Gate Voltage capability (Rgs to avoid floating gate) Exceeding Vgs may result in permanent device degradation due to oxide breakdown and dielectric rupture. The real oxide breakdown capability is higher than this value, and is related to the oxide thickness; but this value, with a reasonable guardband, is the 100% TESTED warranted one Tj must be always lower than 150oCReflects a minimum device service lifetime.Operation at conditions that guarantee a junction temperature less than Tjmax may enhance long term operating life. Ptot=dT/Rthjc=(150-25)/Rthjcderating=1/RthjcThe majority of reliability tests are done at maximum junction temperature, especially the HTRB (High Temperature Reversed Bias) and HTFB (High Temperature Forward Bias). These test results are used as input information for calculation of acceleration factors in different reliability models. In order to achieve high forecasted reliability the maximum operating temperature should be lower than the maximum one. For example, by theoretical models, reducing the junction temperature by 30°C will improve the MTBF (Mean Time Between Failure) of the MOSFET by an order of magnitude. Ptot=Ron(@Tjmax)*I2Ptot = (Tjmax-Tc)/