IDDD10G65C6 英飞凌芯片 INFINEON 中文版规格书手册.pdfVIP

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IDDD10G65C6 英飞凌芯片 INFINEON 中文版规格书手册.pdf

IDDD10G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation G is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Q x V . The CoolSiC™ Schottky diode V G

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