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Radvista RoHS RA2054
Corporation Compliant Rev1.0
High Performance PIN Diode Electrical Specifications @ +25 °C,
_
Parameter Symbol Conditions Units Min Typ Max
Reverse Vbr Ir=10uA volt 250 300 350
Breakdown
Voltage
Junction Cj 10V and 1MHz pf 0.13 0.15 0.17
Capacitance
Series Resistance Rs 10mA and 500MHz ohm 1.0 1.2
Notes:
1. Reverse Breakdown Voltage Vbr is measured at 10uA.
2. Junction Capacitance Cj is measured at 10 volts at 1 MHz.
3. Series Resistance Rs is measured at 10mA at 500MHz.
4. I region width is greater than 25 um with typical value 30 um.
5. Chip size is from 13 x 13 (mil*mil) to 15 x 15 (mil*mil).
6. The thickness of gold coating on both surfaces is not smaller than 2um.
7. Ceramic glass passivation technology is used.
8. All the parts are verified to meet the standard visual criteria.
9. All the parts are verified to meet the thermal shock test from -55 °C to +85 °C
10. All the parts are verified to meet high temperature baking test at + 125 °C
Radvista Corporation
400 N. White Deer Trail, Vernon Hills, IL 60061, USA Tel 847-573-9866
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