P型铜铁矿结构掺杂氧化物半导体CuAlO2的制备及性能研究的中期报告.docx

P型铜铁矿结构掺杂氧化物半导体CuAlO2的制备及性能研究的中期报告 【摘要】P型氧化物半导体CuAlO2具有优异的光电性能，成为太阳能电池材料和光电器件方面的研究热点。本研究采用共沉淀法制备CuAlO2粉末，通过掺杂不同量的Ni、Mn、Fe氧化物，探究掺杂对CuAlO2半导体性能的影响。研究结果表明，适量的掺杂能够提高样品的电导率和光电性能，其中Ni掺杂最为有效，其次是Mn掺杂，Fe掺杂对样品性能影响较小。 【关键词】P型铜铁矿结构；氧化物半导体；掺杂；共沉淀法；光电性能 【Abstract】P-type oxide semiconductor CuAlO2 has excellent optoelectronic properties and has become a research hotspot in the field of solar cell materials and optoelectronic devices. In this study, CuAlO2 powder was prepared by co-precipitation method, and the effect of doping Ni, Mn, and Fe oxides on the semiconductor properties of CuAlO2 was investigated. The research results show that appropriate doping can improve the conductivity and optoelectronic properties of the sample, among which Ni doping is the most effective, followed by Mn doping, and Fe doping has a small effect on the sample properties. 【Keywords】 P-type copper iron sulfide structure; oxide semiconductor; doping; co-precipitation method; optoelectronic properties