原创力文档YJ扬杰TSBD芯片TSB58T080SS-255A规格说明书用户手册产品说明书使用说明文档安装使用手册
QⅢ-RD02-L-96A1 Wafer Datasheet
TSB58T080S(A)S-255A
3A/60V(1), low VF Schottky barrier diode with trench MOS structure
Mechanical Data
Chip Drawing Item Information
Die Size (A) 1473 µm 58 mil
Top Metal Pad Size (B) 1379µm 54mil
Chip Size (C) 1393µm 55mil
Wafer Thickness (D) 255 µm 9.5 mil
Scribe Line Width (E) 80 µm 3.15 mil
Wafer Size 6 inch
Top Side Metallization TSB58T060SS-255A Al/Ag
Back Side Metallization Ti Ni Ag
Stored in original container, in
Recommended dry nitrogen, (6 months at an
Storage Environment ambient temperature of
23 ℃±3℃)
Electrical Characteristics (T =25℃, unless otherwise specified)(2)
J
Un
Parameter Description Min. Typ. Max. Test Condition
it
VBR Reverse
您可能关注的文档
- YJ扬杰静电保护二极管 ESD3V3LA规格说明书.pdf
- YJ扬杰超快恢复二极管 SF11G规格说明书.pdf
- YJ扬杰快恢复二极管 ZK2000-10规格说明书.pdf
- YJ扬杰快速 相控晶闸管 KK1800-16规格说明书.pdf
- YJ扬杰ALL MOSFET YJG60G04HHQ规格说明书.pdf
- YJ扬杰整流模块 MD100S08NM2规格说明书.pdf
- YJ扬杰SiC MOSFET YJD212080NCTG1规格说明书.pdf
- YJ扬杰ALL MOSFET BSS84KJ规格说明书.pdf
- YJ扬杰ALL MOSFET YJP70G10A规格说明书.pdf
- YJ扬杰快恢复二极管 GR2ABF规格说明书.pdf
文档评论（0）