文件第十届微波集成电路单指多指inpdhbt电学热学特性.pdfVIP

Proceedings of the 10th European Microwave Integrated Circuits Conference Electrical and Thermal Characterization of Single and Multi-Finger InP DHBTs ∗ † ∗ † † † ∗ V. Midili , V. Nodjiadjim , Tom K. Johansen , M. Riet , J.Y. Dupuy , A. Konczykowska , M. Squartecchia ∗Department of Electrical Engineering, Technical University of Denmark, 2800 Kgs.Lyngby, Denmark †III-V LAB (joint lab of Alca -Lucent Bell Labs, Thales and CEA-Leti), Route de Nozay, 91460 Marcoussis, France : midili@elektro.dtu.dk —This paper presents the characterization of sin- II. DEVICE DESCRIPTION gle and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs). It is used as the starting The DHBTs presented in this work were realized at point for technology optimization. Safe Operating Area (SOA) Alca -Lucent Bell Labs III-V Lab. The epitaxial layers were and small signal AC parameters are investigated along with grown by BE on a semi insulating Fe-doped InP substrate thermal characteristics. The results are presented comparing and then a triple mesa self-aligned process was used. The different device dimensions and number of fingers. This work epitaxial structure ludes a 40 nm InP emitter, a 28 nm gives directions towards further optimization of geometrical InGaAs base and a 190 nm compositional graded I ollector. parameters and reduction of thermal effects. Single